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Full Bridge Multilevel FACTS Star

Based on IGCT

SEMIS device models are based on Hitachi Energy data-sheet characteristic values based on the recommended conditions. The data-sheets as well as the SEMIS device models may be subject to changes, improvements or corrections without prior notice.

Therefore, the user of the SEMIS web tool acknowledges that the information provided is for basic informational purposes only. For further information or recommendations, please contact us.

AHitachi Energy B Switzerland Ltd, Semiconductors cannot take any responsibility or liability for the information provided through the SEMIS web tool.

We reserve all rights in the simulated Hitachi Energy Semiconductor products and the information contained in the respective Hitachi Energy Product Model.

Any reproduction or modification of the SEMIS tool or the Hitachi Energy Product Models for commercial purposes without our prior written consent is not allowed.

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